200V SuperQ MOSFETs

Battery-driven systems must manage high current pulses, aggressive load profiles, and thermally constrained packaging. This environment places considerable stress on power semiconductors, particularly during startup, rapid acceleration, regenerative braking, or fast charging.

By reducing heat loss and preventing thermal runaway, SuperQ devices enable designers to create compact, reliable, high-performance mobility and storage systems.

Why SuperQ?

• Lower R_DS(on) directly improves battery runtime and reduces total energy loss across discharge cycles
• Robust SCSW ensures safe operation in protection circuits
• 175°C industrial rated and automotive qualified

Motor-drive applications are characterized by high electrical noise, aggressive switching transitions, rapid current reversal, and demanding torque profiles. These conditions require MOSFETs that can maintain clean switching, exhibit excellent thermal performance, and deliver reliable performance.

SuperQ 200V MOSFETs enable designers to achieve higher efficiency, quieter operation, and better dynamic performance in demanding motion-control systems.

Why SuperQ?

• Industry-leading resistance enables component count reduction
• Low switching loss minimizes thermal load, reducing the need for heavy cooling or large heat sinks
• Strong SCWC improve resilience during locked-rotor stall events, load surges, and high-speed transitions

Industrial power supplies frequently operate in environments with high electrical transients, thermal swings, and continuous operation. Reliability is paramount, not only for performance but also for safety and uptime.

SuperQ devices provide engineers with the thermal and electrical stability required for truly mission-critical designs.

Why SuperQ?

• Ultra-low resistance for primary and secondary side operation
• Ultra-low switching energy reduces heat buildup during continuous operation
• High SCWC improves survivability in motor-based systems

As solar and energy storage architectures move toward higher power densities, higher DC link voltages, and more compact conversion topologies, MOSFET performance becomes increasingly tied to system efficiency and thermal characteristics.

SuperQ allows designers to push switching frequency higher without sacrificing reliability, unlocking compact, lightweight solar and ESS power modules.

Why SuperQ

• Low Q_SW, Q_OSS, and E_OSS enable high-frequency switching without proportional loss penalties
• Reduced magnetics volume supports compact rooftop and panel-integrated designs
• Industry-leading cost x performance
  175°C rated for long lifetime in harsh conditions

As Class-D audio architectures push toward higher output power, wider supply voltage ranges, and ever-lower distortion targets, MOSFET switching behavior becomes a primary limiter of audio fidelity, efficiency, and EMI performance.

SuperQ MOSFETs enable designers to operate at higher switching frequencies with tighter deadtime control and lower parasitic losses—delivering clean audio output, improved efficiency, and improved radiated emissions in high-performance Class-D amplifiers.

Why SuperQ?

• Lowest C_OSS, C_RSS, E_OSS, AND Q_SW for optimized light-load performance
• Low body diode forward voltage and short deadtime capability for improved THD performance
• Industry-leading cost x performance
• Ultra-low C_OSS for improved radiated emissions