The Most Significant Advance in Silicon Power Since the Superjunction
For over two decades, the fundamental structure of the power MOSFET remained largely unchanged. iDEAL Semiconductor has redefined that structure at the atomic level — creating a breakthrough architecture that delivers a new benchmark in efficiency, resistance, and Cost x Performance.
The Most Significant Advance in Silicon Power Since the Superjunction
For over two decades, the fundamental structure of the power MOSFET remained largely unchanged. iDEAL Semiconductor has redefined that structure at the atomic level — creating a breakthrough architecture that delivers a new benchmark in efficiency, resistance, and Cost x Performance.
SuperQTM Basics
While the industry experiments with expensive materials to improve performance, iDEAL has innovated at the atomic level of the power device, unlocking higher efficiency and higher voltage performance. In silicon.
The SuperQ Architecture
iDEAL’s proprietary SuperQ technology increases the performance of all power semiconductor devices.
It increases silicon utilization from 50% up to 95% and delivers record setting Rsp and switching losses, and does this on a simple, CMOS-like flow. The SuperQ technology is ideal for high frequency designs and enables a lower junction temperature and smaller heatsinks.
Asymmetrical Charge-Balanced Trench
Legacy power device architectures have practical limits that bound the N-Conduction region to 50% of the overall structure. The remaining 50% is used for voltage blocking and does not support conduction. iDEAL has invented a charge-balancing method that can be as thin as 5% of the total structure. This opens more room for conduction and drives efficiency higher.
Thinner Epitaxy
Our state-of-the-art trench technology, SuperQ, delivers near ideal charge balance allowing thinner epitaxy and better figures of merit.
Higher Doping Concentration
SuperQ’s technology allows higher doping concentration in the conduction region due to its blocking efficiency. This increased doping further reduces the resistance of the channel and lowers power loss.
SuperQ Value Proposition
Better Figures of Merit
SuperQ delivers industry’s lowest
resistance in a package
Reduced Switching Loss
SuperQ products are optimized for hard
switching within minimal I*V overlap
Low Stored Energy
Our devices store less energy, allowing
designers to limit switching losses
Ruggedness and Robustness
Our devices are designed for wide SOA
and are 100% UIS tested in production
Optimized Cost x Performance
SuperQ products use simpler manufacturing flows that optimize Cost x Performance
Built for Mass Production
Our products are built in silicon, just like the other 95% of semiconductors
Applications
Our technology applies to voltages from 60 to 1200 V in data centers, USB PD Fast Charging, Motor Drive, Electric Vehicles, Renewable Power Arrays, Electric Bikes, Medical Systems and Home Appliances
Motor Drives
Fast Charging
Data Centers
Contact us to learn more about SuperQ technology
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