iS20M8R0S1P

200V, 8.3mΩ, 128A N-Channel MOSFET

TO-220 package diagram
TO-220
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Features

• Low RDS(on) in TO-220 package rated to 175°C
• High short-circuit withstand capability (SCWC)
•100% UIS tested in production
• Low switching losses, QSW and EOSS
• Easier paralleling with ± 0.5V gate threshold

Applications

  • Motor control
  • Boost converters and SMPS control FETs
  • Secondary side synchronous rectifier
Parameter TA = 25°C unless otherwise noted Value Unit
VDS 200 V
RDS(on) max 8.3
ID 128 A
IDM 476 A
QG 74 nC
QSW 5.2 nC
EOSS 3.0 μJ
VGS ± 20 V
VGS(th) 3.5 V
PD 250 W
TJ,Tstg -55 to 175 °C
EAS 176 mJ
RθJC 0.6 °C/W
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