iS20M6R3S1P

200V, 6,3mΩ, 172A N-Channel MOSFET

TO-220 package diagram
TO-220
Stock for iS20M6R3S1P
Supplier Part number Manufacturer Stock Link
Richardson Electronics iS20M6R3S1P iDEAL Semiconductor 1000

Features

• Industry-leading RDS(on) in TO-220 package
• High short-circuit withstand capability (SCWC)
• 100% UIS tested in production
• Low switching losses, QSW and EOSS
• Easier parallelling with ± 0.5V gate threshold

Applications

  • Motor control
  • Boost converters and SMPS control FETs
  • Secondary side synchronous rectifier
Parameter TA = 25°C unless otherwise noted Value Unit
VDS 200 V
RDS(on) max 6.3
ID 172 A
IDM 640 A
QG 105 nC
QSW 8.3 nC
EOSS 4.0 μJ
VGS ± 20 V
VGS(th) 3.5 V
PD 428 W
TJ,Tstg -55 to 175 °C
EAS 465 mJ
RθJC 0.35 °C/W

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