iS20M5R5S1TC

200V, 5.5mΩ, 175A N-Channel MOSFET

TOLT package diagram
TOLT
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Features

特性

• Industry-leading RDS(on) in TOLT package
• High short-circuit withstand current (SCWC)
• 100% UIS tested in production
• Low switching losses, QSW and EOSS
• Easier parallelling with ± 0.5V gate threshold

Applications

应用

  • Motor control
  • Boost converters and SMPS control FETs
  • Secondary side synchronous rectifier
Parameter TA = 25°C unless otherwise noted Value Unit
VDS 200 V
RDS(on) max 5.5
ID 175 A
IDM 649 A
QG 108 nC
QSW 6.6 nC
EOSS 4.1 μJ
VGS ± 3.5 V
VGS(th) 0.5 V
PD 423 W
TJ,Tstg -55 to 175 °C
EAS 601 mJ
RθJC 0.35 °C/W
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Parameter TA = 25°C unless otherwise noted Value Unit
VDS 200 V
RDS(on) max 5.5
ID 175 A
IDM 649 A
QG 108 nC
QSW 6.6 nC
EOSS 4.1 μJ
VGS ± 3.5 V
VGS(th) 0.5 V
PD 423 W
TJ,Tstg -55 to 175 °C
EAS 601 mJ
RθJC 0.35 °C/W
Request Sample

This device is currently sampling.
Request a sample to begin evaluation.

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