iS20M016S1P

SuperQ 200V N-Channel Power MOSFET

TO-220 package diagram
TO-220
Stock for iS20M016S1P
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Features

特性

Low RDS(on) in TO-220 package
High short-circuit withstand
capability (SCWC)
100% UIS tested in production
Low switching losses, QSW and EOSS
Easier paralleling with ± 0.5V gate threshold tolerance

Applications

应用

Motor Control
Boost Converters and SMPS
Control FETs
Class D Audio
Battery Management Systems

Parameter TA = 25°C unless otherwise noted Value Unit
VDS 200 V
RDS(on) max 16
ID 62 A
IDM 228 A
QG 29 nC
QSW 3 nC
EOSS 1.5 μJ
VGS ± 20 V
VGS(th) 3.0 V
PD 150 W
TJ,Tstg 175 °C
EAS 209 mJ
RθJC 1 °C/W
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Parameter TA = 25°C unless otherwise noted Value Unit
VDS 200 V
RDS(on) max 16
ID 62 A
IDM 228 A
QG 29 nC
QSW 3 nC
EOSS 1.5 μJ
VGS ± 20 V
VGS(th) 3.0 V
PD 150 W
TJ,Tstg 175 °C
EAS 209 mJ
RθJC 1 °C/W
Contact Us

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