iS20L8R8S1C

SuperQ 200V N-Channel Power MOSFET

PDFN 5x6 package diagram
PDFN 5x6
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Features

特性

• Industry leading on-resistance, RDS(on)
• Logic level gate threshold optimized for 5V gate drive
• Reduced switching loss through lowest QSW and energy stored, EOSS
• Low reverse recovery time Trr and Qrr

Applications

应用

• Synchronous rectification with 5V gate drive
• USB Power Delivery
• AC/DC adapters

Parameter TA = 25°C unless otherwise noted Value Unit
VDS 200 V
RDS(on) max 8.8 mΩ
ID 112 A
IDM 364 A
QG 58 nC
QSW 3 nC
EOSS 1.8 μJ
VGS ± 20 V
VGS(th) 1.8 V
PD 208 W
TJ,Tstg 150 °C
EAS 343 mJ
RθJC 0.6 °C/W
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Parameter TA = 25°C unless otherwise noted Value Unit
VDS 200 V
RDS(on) max 8.8 mΩ
ID 112 A
IDM 364 A
QG 58 nC
QSW 3 nC
EOSS 1.8 μJ
VGS ± 20 V
VGS(th) 1.8 V
PD 208 W
TJ,Tstg 150 °C
EAS 343 mJ
RθJC 0.6 °C/W
Contact Us

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