What Can SuperQ™ Do for Isolated DC-DC Converters
Modern isolated DC-DC stages are being pushed harder than ever: higher bus voltages, higher current density, tighter EMI limits, and smaller enclosures with less airflow.
Whether you’re designing 48 V-to-12 V intermediate bus converters, isolated battery-to-load rails, or compact auxiliary supplies, efficiency and robustness quickly become the limiting factors.
SuperQ MOSFETs reduce switching losses, support higher voltages (150V – 300V), lower FET count, enabling higher power density.
8.8mΩ
Ultra-low RDS(on) in PDFN at 200V
30°C
Cooler switch operation
Eoss
Higher efficiency at high VIN
150V – 300V
Optimized voltage range
Low QSW
Push frequency higher (up to 1MHz)
175°C
High TJ capability and excellent SCWC
Isolated DC-DC Block Diagrams
Active Clamp Forward
Half-Bridge
Full-Bridge
SuperQ MOSFETs are available for high-power-density isolated DC-DC, including 48 V-to-12 V intermediate bus converters, on-board power, and auxiliary rails.
Why SuperQ?
SuperQ MOSFETs reduce conduction and switching losses, enabling higher efficiency and cooler operation with fewer devices.
- Higher efficiency at high current - +0.8% efficiency benefit
- Improved thermal performance - 31°C degrees cooler
- Lower losses – 35 – 50% lower losses
- Industry-best cost x performance
| iS15M7R1S1C | 150V Comp MOSFET |
SuperQ Improvement |
|
|---|---|---|---|
| BVDSS (V) | 150V | 150V | - |
| RDS(ON),MAX (mΩ) | 6.4 | 7.4 | 1.16x |
| QSW (nC) | 4.9 | 14 | 2.86x |
| EOSS (75V) (µJ) | 1 | 3.4 | 3.4x |
| Thermal Performance* (°C max) |
120.5 | 151.5 | 31°C cooler |
