High-Efficiency Silicon
Power Devices for
Next-Generation
Data Centers

Data centers already account for more than 2% of global electricity consumption, and the IEA forecasts this will exceed 1 petawatt annually by 2026. In the U.S. alone, demand is expected to reach 1 petawatt by 2030 — driven largely by AI, hyperscale infrastructure, and high-performance computing (HPC).

As these workloads scale, efficiency is everything. Programs like 80 PLUS, ENERGY STAR, and custom OEM standards are enforcing tighter efficiency margins at every power conversion stage.

The Silicon Trade-off — Until Now

Silicon remains the industry’s dominant material for power switching due to its maturity, reliability, and cost. But in the pursuit of greater efficiency, wide bandgap devices are aggressively targeting data center platforms — offering performance improvements, but at significantly higher cost and integration complexity.

iDEAL Semiconductor is changing that.

We’ve reinvented the silicon MOSFET, and unlocked performance once thought impossible without wide bandgap materials — and we did it on a CMOS-compatible, high-volume flow.

Meet SuperQTM

A New Class of Power Efficiency

Our proprietary SuperQ trench architecture doubles silicon utilization (from ~50% to 95%) while delivering:

  1. Industry-best resistance per unit area
  2. Dramatically improved conduction and switching losses
  3. A step change in silicon performance — without the cost of switching to wide bandgap

SuperQ MOSFETs offer the efficiency of wide bandgap, the cost and scalability of silicon, and the design simplicity needed for high-volume server platforms.

The iDEAL Fit for 48V AI
Power Architecture

From 1.4kW to 10kW+ racks, SuperQ is ideal for:

  1. LLC and phase-shifted full bridge topologies
  2. Boost stages and battery backup units (BBUs)
  3. High-efficiency multilevel PFC in AI and hyperscale platforms
  4. 48V-to-12V converters (intermediate bus)

Why SuperQ for Data Centers?

Lower PSU
power losses

Reduced operational expenses

Better thermal
properties

Improved power density

Mature silicon
supply chain

Lower cost, easier sourcing

Available Power Solutions for Data Center

SuperQ MOSFETs available from 150V to 200V.
For datasheets, samples, or application design support: