iS20M5R5S1H

200V, 5.5mΩ, 148A N-Channel MOSFET

D2PAK-7L package diagram
D2PAK-7L
Stock for iS20M5R5S1H
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Features

• Industry leading Rds(on) in D2PAK-7L package
• High short-circuit withstand capability (SCWC)
•100% UIS tested in production
• Low switching losses, QSW and EOSS
• Easier paralleling with ± 0.5V gate threshold

Applications

  • Motor control
  • Boost converters and SMPS control FETs
  • Secondary side synchronous rectifier
Parameter TA = 25°C unless otherwise noted Value Unit
VDS 200 V
RDS(on) max 5.5
ID 148 A
IDM 556 A
QG 110 nC
QSW 7.8 nC
EOSS 3.9 μJ
VGS ± 20 V
VGS(th) 1.5 V
PD 300 W
TJ,Tstg -55 to 175 °C
EAS 553 mJ
RθJC 0.5 °C/W
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