iS20M8R0S1TC

200V, 8mΩ, 132A N-Channel MOSFET

TOLT package diagram
TOLT
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Features

特性

• Low RDS(on) in TOLT package rated to 175°C
• High short-circuit withstand capability (SCWC)
•100% UIS tested in production
• Low switching losses, QSW and EOSS
• Easier paralleling with ± 0.5V gate threshold

Applications

应用

  • Motor control
  • Boost converters and SMPS control FETs
  • Secondary side synchronous rectifier
Parameter TA = 25°C unless otherwise noted Value Unit
VDS 200 V
RDS(on) max 8
ID 132 A
IDM 489 A
QG 75 nC
QSW 4.9 nC
EOSS 2.9 μJ
VGS ± 20 V
VGS(th) 3.5 V
PD 333 W
TJ,Tstg -55 to 175 °C
EAS 373 mJ
RθJC 0.45 °C/W
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Parameter TA = 25°C unless otherwise noted Value Unit
VDS 200 V
RDS(on) max 8
ID 132 A
IDM 489 A
QG 75 nC
QSW 4.9 nC
EOSS 2.9 μJ
VGS ± 20 V
VGS(th) 3.5 V
PD 333 W
TJ,Tstg -55 to 175 °C
EAS 373 mJ
RθJC 0.45 °C/W
Contact Us

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