iS20M016S1C

SuperQ 200V N-Channel Power MOSFET

PDFN 5x6 package diagram
PDFN 5x6
Stock for iS20M016S1C
Supplier Part number Manufacturer Stock Link
No in-stock supplier offers were returned.

Features

特性

• Low RDS(on) in PDFN 5x6 package
• High short-circuit withstand capability (SCWC)
• 100% UIS tested in production
• Low switching losses, QSW and EOSS
• Easier paralleling with ± 0.5V gate threshold tolerance

Applications

应用

• Motor Control
• Boost Converters and SMPS
• Control FETs
• Class D Audio
• Battery Management Systems

Parameter TA = 25°C unless otherwise noted Value Unit
VDS 200 V
RDS(on) max 16
ID 62 A
IDM 228 A
QG 29 nC
QSW 3 nC
EOSS 1.5 μJ
VGS ± 20 V
VGS(th) 3.0 V
PD 150 W
TJ,Tstg -55 to 175 °C
EAS 209 mJ
RθJC 1 °C/W
Request Sample

This device is currently sampling.
Request a sample to begin evaluation.

Parameter TA = 25°C unless otherwise noted Value Unit
VDS 200 V
RDS(on) max 16
ID 62 A
IDM 228 A
QG 29 nC
QSW 3 nC
EOSS 1.5 μJ
VGS ± 20 V
VGS(th) 3.0 V
PD 150 W
TJ,Tstg -55 to 175 °C
EAS 209 mJ
RθJC 1 °C/W
Request Sample

This device is currently sampling.
Request a sample to begin evaluation.

Engineering Chat