iS20M8R8S1C

200V, 8.8mΩ, 113A N-Channel MOSFET

Stock for iS20M8R8S1C
Supplier Part number Manufacturer Stock Link
No in-stock supplier offers were returned.

Features

• Lowest on-resistance RDS(on) in package
• Optimized QSW for hard switching
• Ultra-low energy stored, EOSS
• Ultra-low turn-off energy, EOFF
• Low reverse recovery time trr and Qrr

Applications

  • Boost converters and SMPS control FETs
  • Secondary side synchronous rectifier
  • Motor control
Parameter TA = 25°C unless otherwise noted Value Unit
VDS 200 V
RDS(on) max 8.8
ID 113 A
IDM 308 A
QG 58 nC
QSW 3 nC
EOSS 1.8 μJ
VGS ± 20 V
VGS(th) 3.4 V
PD 250 W
TJ,Tstg -55 to 175 °C
EAS 343 mJ
RθJC 0.6 °C/W
Request Sample

This device is currently sampling.
Request a sample to begin evaluation.

Engineering Chat