by iDEAL Semiconductor | Apr 1, 2026 | In the News
Battery-powered motor drives are becoming the dominant architecture across a wide range of applications, from micromobility and power tools to agricultural machinery and industrial electrification. As system power levels increase and battery voltages climb from legacy...
by iDEAL Semiconductor | Mar 16, 2026 | In the News
Over the last two decades, improvements in silicon power devices have been largely evolutionary rather than revolutionary, while much of the industry’s research focus has shifted toward wide-bandgap materials such as silicon carbide (SiC) and gallium nitride (GaN)....
by iDEAL Semiconductor | Sep 18, 2025 | In the News
SuperQ® is a new MOSFET architecture that extends the performance of silicon power devices within this established framework. It uses a novel, patented asymmetrical reduced surface field (RESURF) structure that significantly increases the n-conduction region of the...
by iDEAL Semiconductor | Aug 21, 2025 | In the News
iDEAL Semiconductor’s SuperQ technology has entered full production, with the first products being 150-V MOSFETs. In addition, a family of 200-V MOSFETs is sampling, while 250-V to 400-V MOSFETs are coming soon. According to iDEAL Semiconductor, the SuperQ...
by iDEAL Semiconductor | Jul 28, 2025 | In the News
David Jauregui, Chief Technology Officer of iDEAL Semiconductor, reveals that the company’s SuperQ® technology has entered full production, with the first products being 150 V MOSFETs. A family of 200 V MOSFETs is sampling. David explains that SuperQ is the first...
by iDEAL Semiconductor | Jul 18, 2025 | In the News
After seven years of development, iDeal Semiconductor has started shipping its first silicon power devices based on a new architecture. The first 150V power MOSFETs are shipping with an on-resistance of 6.4mΩ, while 200V devices are now sampling. Devices are planned...
