by iDEAL Semiconductor | May 20, 2026 | In the News
In this episode of Power Corner, host Aalyia Shaukat speaks with David Jauregui, Co-Founder and CTO of iDEAL Semiconductor, about the company’s SuperQ MOSFET technology—a novel approach to charge compensation that challenges both conventional superjunction (SJ)...
by iDEAL Semiconductor | May 20, 2026 | In the News
iDEAL argues that, instead of using a bulk p-type pillar to occupy ~50% of the structure, you can use a nanometer-thin high-k dielectric film (like alumina and hafnia) via atomic layer deposition (ALD) inside a narrow trench that can theoretically occupy as little as...
by iDEAL Semiconductor | May 20, 2026 | In the News
This article reviews how assumptions about MOSFET switching behavior are used to calculate switching loss accurately in planar MOSFETs. It then explains why these assumptions are not valid in superjunction and other RESURF MOSFETs, leading to overestimations when the...
by iDEAL Semiconductor | May 1, 2026 | In the News
Reverse recovery charge, QRR, is one of those parameters most power engineers know well. It appears prominently in MOSFET datasheets, it finds its way into switching-loss equations, and it is often used to compare devices when efficiency matters. The problem is not...
by iDEAL Semiconductor | Apr 29, 2026 | In the News
Silicon power semiconductors are a mature and well-understood technology; for many years, progress has come primarily through incremental improvements rather than fundamental architectural change. The last major leap at the device architecture level was the...
by iDEAL Semiconductor | Apr 10, 2026 | In the News
Is silicon really reaching its limits, or is it being redefined? In this recent Electronic Design podcast, iDEAL Semiconductor’s Co-founder and CTO, David Jauregui, discusses how next-generation silicon architectures are breaking traditional performance tradeoffs and...
