SuperQ™ is a new MOSFET architecture that extends the performance of silicon power devices within this established framework. It uses a novel, patented asymmetrical reduced surface field (RESURF) structure that significantly increases the n-conduction region of the device – up to 95% of the conduction area versus 50% or less in traditional Superjunction and other RESURF technologies.
Commercialization of devices based on this technology began in July 2025, with iDEAL Semiconductor launching an initial product lineup including both 150 V and 200 V MOSFETs, which are in full production. Higher voltage offerings, from 250 V to 400 V, are in development as part of the near-term roadmap.