by iDEAL Semiconductor | Oct 7, 2026 | In the News
“In this interview with EEWorld, David Jauregui, Co-Founder and Chief Technology Officer of iDEAL Semiconductor, takes a closer look at the “silicon limit,” field shaping, switching and conduction losses, gate-drive requirements, reliability, and its SuperQ...
by iDEAL Semiconductor | Oct 2, 2026 | In the News
“The SuperQ architecture supports high electric field strength in the drift region, enabling a voltage blocking capability of approximately 19–20 V/µm, approximately 50% higher than that found in similar SuperJunction devices.” Read...
by iDEAL Semiconductor | Sep 16, 2026 | In the News
“How much more performance can silicon power MOSFETs deliver? The answer lies in their architecture. As designers demand higher efficiency, greater power density, and dependable robustness, silicon is evolving to meet those requirements. This article explores...
by iDEAL Semiconductor | Jul 28, 2026 | In the News
“This article explores the evolution of Qrr as the forward conduction time transitions from nanosecond-scale pulses to hundreds of nanoseconds versus steady-state (DC) conduction. Using charge control theory, TCAD simulations, and double-pulse experimental...
by iDEAL Semiconductor | Jul 9, 2026 | In the News
“Silicon power MOSFETs have served as the backbone of power conversion systems for decades, offering a well-balanced combination of performance, cost, and manufacturability across a wide range of applications. From point-of-load converters to motor drives and...
by iDEAL Semiconductor | Jul 7, 2026 | In the News
“This article examines the unique short-circuit challenges in high voltage BMS designs and how MOSFET selection, particularly short-circuit withstand capability (SCWC), directly impacts system safety, reliability, and design complexity. The Shift Toward...
