by iDEAL Semiconductor | Oct 15, 2026 | Press
SuperQ silicon power MOSFETs are now available through Marubun’s distribution network. LEHIGH VALLEY, PA, September 2026 – iDEAL Semiconductor, a developer of next-generation silicon power devices based on its patented SuperQ® technology, today announced a...
by iDEAL Semiconductor | Oct 7, 2026 | In the News
“In this interview with EEWorld, David Jauregui, Co-Founder and Chief Technology Officer of iDEAL Semiconductor, takes a closer look at the “silicon limit,” field shaping, switching and conduction losses, gate-drive requirements, reliability, and its SuperQ...
by iDEAL Semiconductor | Oct 2, 2026 | In the News
“The SuperQ architecture supports high electric field strength in the drift region, enabling a voltage blocking capability of approximately 19–20 V/µm, approximately 50% higher than that found in similar SuperJunction devices.” Read...
by iDEAL Semiconductor | Sep 16, 2026 | In the News
“How much more performance can silicon power MOSFETs deliver? The answer lies in their architecture. As designers demand higher efficiency, greater power density, and dependable robustness, silicon is evolving to meet those requirements. This article explores...
by iDEAL Semiconductor | Sep 9, 2026 | Blog
The quarter-brick DC/DC converter remains one of the most widely deployed isolated power modules in telecom infrastructure, networking equipment, industrial systems, and distributed 48V architectures. Although the quarter-brick format is mature, incremental efficiency...
