by iDEAL Semiconductor | Nov 20, 2025 | Press
New 150V/2.5mΩ device delivers industry-leading short-circuit robustness and enables up to 50% component reduction in 72V+ battery management systems LEHIGH VALLEY, PA, November 20, 2025 – iDEAL Semiconductor, a leader in high-performance power silicon, today...
by iDEAL Semiconductor | Oct 23, 2025 | Press
LEHIGH VALLEY, PA, October 23, 2025 – iDEAL Semiconductor today announced that its SuperQ™ technology has achieved AEC-Q101 automotive qualification, marking a significant expansion into high-reliability markets. iDEAL’s first automotive-qualified product to enter...
by iDEAL Semiconductor | Sep 18, 2025 | In the News
SuperQ™ is a new MOSFET architecture that extends the performance of silicon power devices within this established framework. It uses a novel, patented asymmetrical reduced surface field (RESURF) structure that significantly increases the n-conduction region of the...
by iDEAL Semiconductor | Sep 18, 2025 | Press
LEHIGH VALLEY, PA, September 18, 2025 – iDEAL Semiconductor confirms that its ultra-efficient SuperQ™ silicon power devices are now in production at Polar Semiconductor, a leading foundry specializing in high-voltage, power, and sensor technologies. SuperQ represents...
by iDEAL Semiconductor | Sep 4, 2025 | Press
LEHIGH VALLEY, PA, September 4, 2025 – iDEAL Semiconductor has announced the first of its 200 V family of SuperQ™-based MOSFETs has entered mass production, with four additional 200 V devices now sampling. SuperQ is the first major advance in silicon MOSFET technology...
