by iDEAL Semiconductor | Sep 18, 2025 | In the News
SuperQ® is a new MOSFET architecture that extends the performance of silicon power devices within this established framework. It uses a novel, patented asymmetrical reduced surface field (RESURF) structure that significantly increases the n-conduction region of the...
by iDEAL Semiconductor | Sep 18, 2025 | Press
LEHIGH VALLEY, PA, September 18, 2025 – iDEAL Semiconductor confirms that its ultra-efficient SuperQ® silicon power devices are now in production at Polar Semiconductor, a leading foundry specializing in high-voltage, power, and sensor technologies. SuperQ represents...
by iDEAL Semiconductor | Sep 4, 2025 | Press
LEHIGH VALLEY, PA, September 4, 2025 – iDEAL Semiconductor has announced the first of its 200 V family of SuperQ®-based MOSFETs has entered mass production, with four additional 200 V devices now sampling. SuperQ is the first major advance in silicon MOSFET technology...
by iDEAL Semiconductor | Aug 21, 2025 | In the News
iDEAL Semiconductor’s SuperQ technology has entered full production, with the first products being 150-V MOSFETs. In addition, a family of 200-V MOSFETs is sampling, while 250-V to 400-V MOSFETs are coming soon. According to iDEAL Semiconductor, the SuperQ...
by iDEAL Semiconductor | Jul 31, 2025 | Press
Follows launch of first SuperQ-based chips, which marks the first major advance in silicon MOSFET architecture since the Superjunction over 25 years ago. LEHIGH VALLEY, PA, July 31, 2025 – iDEAL Semiconductor, a fabless power semiconductor company focused on...
