iS25M035S1C

250V, 35mΩ, 39A N-Channel MOSFET

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Features

特性

• Industry-leading RDS(on) in PDFN 5x6 package
• High short-circuit withstand capability (SCWC)
• 100% UIS tested in production, 175°C rated
• Low switching losses, QSW and EOSS
• Easier parallelling with + 0.5V gate threshold

Applications

应用

• Isolated DC-DC modules
• LED Lighting
• Boost converters and SMPS control FETs
• Motor drive

Parameter TA = 25°C unless otherwise noted Value Unit
VDS 250 V
RDS(on) max 35 mΩ
ID 39 A
IDM 143 A
QG 28 nC
QSW 2.7 nC
EOSS 1.4 μJ
VGS ± 20 V
VGS(th) 0.6 V
PD 125 W
TJ,Tstg -55 to 175 °C
EAS 39 mJ
RθJC 1.2 °C/W
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This device is currently sampling.
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Parameter TA = 25°C unless otherwise noted Value Unit
VDS 250 V
RDS(on) max 35 mΩ
ID 39 A
IDM 143 A
QG 28 nC
QSW 2.7 nC
EOSS 1.4 μJ
VGS ± 20 V
VGS(th) 0.6 V
PD 125 W
TJ,Tstg -55 to 175 °C
EAS 39 mJ
RθJC 1.2 °C/W
Request Sample

This device is currently sampling.
Request a sample to begin evaluation.

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