iS15M3R4S1F

SuperQ 150V N-Channel Power MOSFET

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Features

特性

Low RDS(on) in ITO-220 package
High short-circuit withstand capability (SCWC)
100% UIS tested in production
Low switching losses, QSW and EOSS
Industrial rating to 175°C junction temperature

Applications

应用

Solar inverter
Boost converters and SMPS control FETs
Secondary side synchronous rectifier
Motor control

Parameter TA = 25°C unless otherwise noted Value Unit
VDS 150 V
RDS(on) max 3.4 mΩ
ID 75 A
IDM 298 A
QG 88 nC
QSW 8.9 nC
EOSS 1.7 μJ
VGS ± 20 V
VGS(th) 3.3 V
PD 43 W
TJ,Tstg 175 °C
EAS 450 mJ
RθJC 3.5 °C/W
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This device is currently sampling.
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Parameter TA = 25°C unless otherwise noted Value Unit
VDS 150 V
RDS(on) max 3.4 mΩ
ID 75 A
IDM 298 A
QG 88 nC
QSW 8.9 nC
EOSS 1.7 μJ
VGS ± 20 V
VGS(th) 3.3 V
PD 43 W
TJ,Tstg 175 °C
EAS 450 mJ
RθJC 3.5 °C/W
Request Sample

This device is currently sampling.
Request a sample to begin evaluation.

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