iS15L5R5S1C

150V, 5.5mΩ, 134A N-Channel MOSFET

PDFN 5x6 package diagram
PDFN 5x6
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Features

特性

• Low RDS(on) in PDFN 5x6 package
• N-channel, logic-level threshold
• Ultra-low energy stored EOSS
• 100% UIS tested in production

Applications

应用

• Synchronous rectification with 5V gate drive
• SMPS control FETs

Parameter TA = 25°C unless otherwise noted Value Unit
VDS 150 V
RDS(on) max 5.5 mΩ
ID 134 A
IDM 434 A
QG 53 nC
QSW 5.4 nC
EOSS 1.1 μJ
VGS ± 20 V
VGS(th) 20 V
PD 208 W
TJ,Tstg -55 to 150 °C
EAS 641 mJ
RθJC 0.6 °C/W
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Parameter TA = 25°C unless otherwise noted Value Unit
VDS 150 V
RDS(on) max 5.5 mΩ
ID 134 A
IDM 434 A
QG 53 nC
QSW 5.4 nC
EOSS 1.1 μJ
VGS ± 20 V
VGS(th) 20 V
PD 208 W
TJ,Tstg -55 to 150 °C
EAS 641 mJ
RθJC 0.6 °C/W
Contact Us

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