iS30M035S1C

300V, 35mΩ, 39A N-Channel MOSFET

Stock for iS30M035S1C
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Features

• Industry-leading RDS(on) in PDFN 5x6 package
• High short-circuit withstand capability (SCWC)
• 100% UIS tested in production
• Low switching losses, QSW and EOSS
• Easier paralleling with ± 0.5V gate threshold

Applications

  • LED lighting
  • Boost converters and SMPS control FETs
  • Motor drive
Parameter TA = 25°C unless otherwise noted Value Unit
VDS 300 V
RDS(on) max 35
ID 39 A
IDM 143 A
QG 28 nC
QSW 2.7 nC
EOSS 1.4 μJ
VGS ± 20 V
VGS(th) 3.6 V
PD 125 W
TJ,Tstg -55 to 175 °C
EAS 39 mJ
RθJC 1.2 °C/W
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