iS15M8R8S1F

SuperQ 150V N-Channel Power MOSFET

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Features

特性

Low on-resistance, RDS(on)
Ultra low energy stored, EOSS
Ultra low turn-off energy, EOFF
Optimized QSW for hard switching
Low reverse recovery time Trr and Qrr

Applications

应用

Solar Inverters
Boost converters and SMPS control FETs
Secondary side synchronous rectifier
Motor Control

Parameter TA = 25°C unless otherwise noted Value Unit
VDS 150 V
RDS(on) max 8.8 mΩ
ID 47 A
IDM 186 A
QG 36 nC
QSW 2.6 nC
EOSS 0.7 μJ
VGS ± 20 V
VGS(th) 3.3 V
PD 43 W
TJ,Tstg 175 °C
EAS 350 mJ
RθJC 3.5 °C/W
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This device is currently sampling.
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Parameter TA = 25°C unless otherwise noted Value Unit
VDS 150 V
RDS(on) max 8.8 mΩ
ID 47 A
IDM 186 A
QG 36 nC
QSW 2.6 nC
EOSS 0.7 μJ
VGS ± 20 V
VGS(th) 3.3 V
PD 43 W
TJ,Tstg 175 °C
EAS 350 mJ
RθJC 3.5 °C/W
Request Sample

This device is currently sampling.
Request a sample to begin evaluation.

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