iS15L8R8S1C

SuperQ 150V N-Channel Power MOSFET with Logic Level Threshold

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Features

Low on-resistance
N-channel, logic level threshold
Ultra low energy stored
Lower reverse recovery time
100% UIS tested in production

Applications

Parameter TA = 25°C unless otherwise noted Value Unit
VDS 150 V
RDS(on) max 8.8
ID 80 A
IDM 288 A
QG 40 nC
QSW 3 nC
EOSS 0.8 μJ
VGS ± 20 V
VGS(th) 1.8 V
PD 125 W
TJ,Tstg 150 °C
EAS 446 mJ
RθJC 1 °C/W
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