iS15M8R8S1C

150V, 8.8mΩ, 88A N-Channel MOSFET

Stock for iS15M8R8S1C
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Features

• Low on-resistance, RDS(on)
• Ultra-low energy stored, EOSS
• Ultra-low turn-off energy, EOFF
• Optimized QSW for hard switching
• Low reverse recovery time trr and Qrr

Applications

  • Boost converters and SMPS control FETs
  • Secondary side synchronous rectifier
  • Motor control
Parameter TA = 25°C unless otherwise noted Value Unit
VDS 150 V
RDS(on) max 8.8
ID 88 A
IDM 351 A
QG 36 nC
QSW 3.6 nC
EOSS 0.7 μJ
VGS ± 20 V
VGS(th) 3.3 V
PD 150 W
TJ,Tstg -55 to 175 °C
EAS 350 mJ
RθJC 1 °C/W
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