| 供应商 | 零件编号 | 制造商 | 库存 | 链接 |
|---|---|---|---|---|
| 未找到有库存的供应商报价。 | ||||
Features
特性
D2PAK-3L封装,RDS(on)值低
短路耐受能力(SCWC)高
生产过程中经过100% UIS测试
开关损耗、QSW和EOSS值低
栅极阈值容差为±0.5V,便于并联
Applications
应用
电机控制
升压转换器和开关电源控制场效应管(FET)
D类音频
电池管理系统
| Parameter TA = 25°C unless otherwise noted | Value | Unit |
|---|---|---|
| VDS | 200 | V |
| RDS(on) max | 16 | mΩ |
| ID | 62 | A |
| IDM | 228 | A |
| QG | 29 | nC |
| QSW | 3 | nC |
| EOSS | 1.5 | μJ |
| VGS | ± 20 | V |
| VGS(th) | 3 | V |
| PD | 150 | W |
| TJ,Tstg | 175 | °C |
| EAS | 209 | mJ |
| RθJC | 1 | °C/W |
- Application notes
- Device models
- Demo boards
- Learn more about SuperQ Technology
| Parameter TA = 25°C unless otherwise noted | Value | Unit |
|---|---|---|
| VDS | 200 | V |
| RDS(on) max | 16 | mΩ |
| ID | 62 | A |
| IDM | 228 | A |
| QG | 29 | nC |
| QSW | 3 | nC |
| EOSS | 1.5 | μJ |
| VGS | ± 20 | V |
| VGS(th) | 3 | V |
| PD | 150 | W |
| TJ,Tstg | 175 | °C |
| EAS | 209 | mJ |
| RθJC | 1 | °C/W |
- Application notes
- Device models
- Demo boards
- Learn more about SuperQ Technology