iS15M3R4S1B

150V, 3.4mโ„ฆ, 182A N-Channel MOSFET

D2PAK-3L package diagram
D2PAK-3L
iS15M3R4S1B ็š„ๅบ“ๅญ˜
ไพ›ๅบ”ๅ•† ้›ถไปถ็ผ–ๅท ๅˆถ้€ ๅ•† ๅบ“ๅญ˜ ้“พๆŽฅ
ๆœชๆ‰พๅˆฐๆœ‰ๅบ“ๅญ˜็š„ไพ›ๅบ”ๅ•†ๆŠฅไปทใ€‚

Features

็‰นๆ€ง

โ€ข ้‡‡็”จ D2PAK-3L ๅฐ่ฃ…ใ€้ขๅฎšๅทฅไฝœๆธฉๅบฆไธบ 175ยฐC ็š„ไฝŽๅŠŸ่€— RDS(on)
โ€ข ้ซ˜็Ÿญ่ทฏ่€ๅ—่ƒฝๅŠ› (SCWC)
โ€ข ็”Ÿไบง่ฟ‡็จ‹ไธญ็ป่ฟ‡ 100% UIS ๆต‹่ฏ•
โ€ข ไฝŽๅผ€ๅ…ณๆŸ่€—๏ผŒQSW ๅ’Œ EOSS
โ€ข ๆ …ๆž้˜ˆๅ€ผๅœจ ยฑ0.5V ่Œƒๅ›ดๅ†…๏ผŒไพฟไบŽๅนถ่”

Applications

ๅบ”็”จ

  • ็”ตๆœบๆŽงๅˆถ
  • ๅ‡ๅŽ‹่ฝฌๆขๅ™จๅ’Œๅผ€ๅ…ณ็”ตๆบ๏ผˆSMPS๏ผ‰ๆŽงๅˆถๅœบๆ•ˆๅบ”็ฎก๏ผˆFET๏ผ‰
  • ๆฌก็บงไพงๅŒๆญฅๆ•ดๆตๅ™จ
Parameter TA = 25ยฐC unless otherwise noted Value Unit
VDS 150 V
RDS(on) max 3.4 mฮฉ
ID 182 A
IDM 729 A
QG 88 nC
QSW 8.9 nC
EOSS 1.7 ฮผJ
VGS ยฑ 20 V
VGS(th) 3.3 V
PD 250 W
TJ,Tstg -55 to 175 ยฐC
EAS 450 mJ
RฮธJC 0.6 ยฐC/W
่”็ณปๆˆ‘ไปฌ
Parameter TA = 25ยฐC unless otherwise noted Value Unit
VDS 150 V
RDS(on) max 3.4 mฮฉ
ID 182 A
IDM 729 A
QG 88 nC
QSW 8.9 nC
EOSS 1.7 ฮผJ
VGS ยฑ 20 V
VGS(th) 3.3 V
PD 250 W
TJ,Tstg -55 to 175 ยฐC
EAS 450 mJ
RฮธJC 0.6 ยฐC/W
่”็ณปๆˆ‘ไปฌ

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