Science and Engineering has unlocked the next level of semiconductor technology

The basic power semiconductor structure has seen limited innovation in the past two decades. iDEAL Semiconductor’s scientific research and engineering at the atomic level has resulted in a novel new structure.

SuperQ™ Basics

While the industry experiments with expensive materials to improve performance, iDEAL has innovated at the atomic level of the power device, unlocking higher efficiency and higher voltage performance. In silicon. Here’s how we do it:

Legacy power device architectures have practical limits that bound the N-Conduction region to 50% of the overall structure. The remaining 50% is used for voltage blocking and does not support conduction. iDEAL has invented a charge-balancing method that can be as thin as 5% of the total structure. This opens more room for conduction and drives efficiency higher.

Our state-of-the-art trench technology, SuperQ, delivers near ideal charge balance allowing thinner epitaxy and better figures of merit.
SuperQ’s technology allows higher doping concentration in the conduction region due to its blocking efficiency. This increased doping further reduces the resistance of the channel and lowers power loss.


SuperQ™ Benefits


Better Figures of Merit

SuperQ delivers industry's lowest resistance per unit area

Low Energy Stored

Our devices store less energy allowing designers to switch at higher frequencies with lower loss

High Voltage Blocking

SuperQ devices block voltage more effectively than legacy superjunction

Built for Mass Production

Our products are built in silicon, just like the other 95% of semiconductors, using 200mm and 300mm wafers.

Fast Recovery

SuperQ products are designed for hard commutation and have low reverse recovery charge

Ultra Low Leakage

State-of-the-art trench technology reduces electric fields and limits leakage

Contact us to learn more about SuperQ technology.

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