Science and Engineering has unlocked the next level of semiconductor technology

The basic power semiconductor structure has seen limited innovation in the past two decades. iDEAL Semiconductor’s scientific research and engineering at the atomic level has resulted in a novel new structure.

SuperQ™ Basics

While the industry experiments with expensive materials to improve performance, iDEAL has innovated at the atomic level of the power device, unlocking higher efficiency and higher voltage performance. In silicon. Here’s how we do it:

Asymmetrical Charge-Balanced Trench

Legacy power device architectures have practical limits that bound the N-Conduction region to 50% of the overall structure. The remaining 50% is used for voltage blocking and does not support conduction. iDEAL has invented a charge-balancing method that can be as thin as 5% of the total structure. This opens more room for conduction and drives efficiency higher.

Thinner Epitaxy

Our state-of-the-art trench technology, SuperQ, delivers near ideal charge balance allowing thinner epitaxy and better figures of merit.

Higher Doping Concentration

SuperQ’s technology allows higher doping concentration in the conduction region due to its blocking efficiency. This increased doping further reduces the resistance of the channel and lowers power loss.