iS20M2R3S1QD

250V, 2.3mΩ, 369A N-Channel MOSFET

QDPAK package diagram
QDPAK
Stock for iS20M2R3S1QD
Supplier Part number Manufacturer Stock Link
No in-stock supplier offers were returned.

Features

• Industry-leading RDS(on) in QDPAK package
• High short-circuit withstand capability (SCWC)
• 100% UIS tested in production
• Low switching losses, QSW and EOSS
• Easier paralleling with ± 0.5V gate threshold

Applications

  • Motor control
  • Boost converters and SMPS control FETs
  • Secondary side synchronous rectifier
Parameter TA = 25°C unless otherwise noted Value Unit
VDS 200 V
RDS(on) max 2.3
ID 369 A
IDM 1168 A
QG 285 nC
QSW 20 nC
EOSS 10.0 μJ
VGS ± 20 V
VGS(th) 3.5 V
PD 750 W
TJ,Tstg -55 to 175 °C
EAS 4147 mJ
RθJC 0.2 °C/W
Contact Us

Engineering Chat