SAN ANTONIO, TX | MARCH 22-26
Join Us in San Antonio!
iDEAL Semiconductor is proud to participate in APEC 2026, the premier global conference for applied power electronics. This year, our engineering team will deliver two technical presentations that push the boundaries of understanding hard-switching behavior when comparing modern Silicon GaN power devices. If you’re designing high-performance power systems, these sessions belong on your calendar!
Featured Technical Presentations
Reexamination of MOSFET Hard Switching Losses in Application for Si and GaN Devices
Presenter: David Jauregui
Session: IS18.2
Date/Time: Wednesday, March 25, 2026 | 1:55 PM – 2:20 PM CT
As switching frequencies rise and designs move toward higher input voltages (48 V and above), the industry must revisit long-held assumptions about hard-switching power losses—especially with the widespread use of REduced SURface Field (RESURF) Silicon Power MOSFETs and the emergence of GaN devices.
This presentation provides a comprehensive look at how Silicon and GaN transistors behave during hard-switched events based on normalized Rdson.
Key topics include:
- Understanding and quantifying MOSFET Switching Charge (QSW) in hard-switching conditions
- Why traditional definitions of QSW break down for RESURF MOSFETs with abrupt COSS transitions
- The growing importance of stored Output Energy (EOSS) in ≥100 V MOSFET applications
- A normalized, side-by-side evaluation of Silicon and GaN comparing combined switching-loss analysis (QSW + EOSS) in a hard-switched power supply
Refining Switching Charge Interval for Power Loss
Presenter: Orion Kress-Sanfilippo
Session: D14.3
Date/Time: Thursday, March 26, 2026 | 12:00 PM – 1:45 PM CT
Switching charge is a cornerstone parameter used across the industry to estimate MOSFET switching losses. However, the traditional triangular approximation of voltage and current that is commonly used in datasheet derivations does not accurately represent the behavior of RESURF devices, whose capacitance-voltage characteristics differ fundamentally from conventional MOSFETs.
In this session we:
- Revisit the standard assumptions behind switching charge and the triangular model
- Show why RESURF devices deviate from the classical voltage/current switching profile
- Introduce a new, more accurate definition of switching charge tailored to modern device structures
- Validate the approach with measured results correlating switching charge to actual losses
Designers relying on datasheet QSW to model high-frequency performance will gain new insight into where traditional methods fall short and how to improve design accuracy with next-generation devices.
Visit Us at APEC 2026
Our team will be available throughout the conference to discuss device physics, system-level optimization, and how our technology enables smaller, faster, more efficient power solutions across data center, industrial, and mobility markets.
To schedule a meeting contact us at in**@*******mi.com
We look forward to seeing you in San Antonio!